WI71100TR
Part Number:
WI71100TR
Category:
-
Manufacturer:
Description:
POWER GAN IC DISCRETE 8X8 PDFN
Encapsulation:
Package:
Cut Tape (CT)
Quantity:
2494
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$6.59
$6.59
10+
$5.05
$50.5
25+
$4.66
$116.5
100+
$4.24
$424
250+
$4.04
$1010
500+
$3.92
$1960
1000+
$3.82
$3820
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Grade
-
Qualification
-
Power Dissipation (Max)
-
Operating Temperature
-40°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
700 V
Technology
GaNFET (Gallium Nitride)
Vgs (Max)
+6V, -4V
Package / Case
8-LDFN Exposed Pad
Vgs(th) (Max) @ Id
1.5V @ 10mA
Current - Continuous Drain (Id) @ 25°C
17A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
6V
Supplier Device Package
8-PDFN (8x8)
Rds On (Max) @ Id, Vgs
120mOhm @ 2A, 6V
Gate Charge (Qg) (Max) @ Vgs
4.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds
120 pF @ 400 V
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