TW027U65C,RQ
Part Number:
TW027U65C,RQ
Category:
-
Manufacturer:
Description:
N-CH SIC MOSFET, 650 V, 0.027 (T
Encapsulation:
Package:
Cut Tape (CT)
Quantity:
0
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$43.77
$43.77
10+
$36.2
$362
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Grade
-
Qualification
-
Current - Continuous Drain (Id) @ 25°C
57A (Tc)
Drain to Source Voltage (Vdss)
650 V
Power Dissipation (Max)
156W (Tc)
Vgs(th) (Max) @ Id
5V @ 3mA
Operating Temperature
175°C
Technology
SiCFET (Silicon Carbide)
Vgs (Max)
+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)
18V
Package / Case
8-PowerSFN
Supplier Device Package
TOLL
Input Capacitance (Ciss) (Max) @ Vds
2288 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 18 V
Rds On (Max) @ Id, Vgs
40mOhm @ 29A, 18V
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