TP65H300G4LSGB-TR
Part Number:
TP65H300G4LSGB-TR
Category:
-
Manufacturer:
Description:
GANFET N-CH 650V 6.5A QFN8X8
Encapsulation:
Package:
Cut Tape (CT)
Quantity:
2782
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$4.6
$4.6
10+
$3.03
$30.3
100+
$2.13
$213
500+
$1.94
$970
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
6.5A (Tc)
Vgs (Max)
±12V
Drain to Source Voltage (Vdss)
650 V
Package / Case
8-VDFN Exposed Pad
Power Dissipation (Max)
21W (Tc)
Technology
GaNFET (Gallium Nitride)
Gate Charge (Qg) (Max) @ Vgs
8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
730 pF @ 400 V
Vgs(th) (Max) @ Id
2.8V @ 500µA
Drive Voltage (Max Rds On, Min Rds On)
6V
Supplier Device Package
8-PQFN (8x8)
Rds On (Max) @ Id, Vgs
312mOhm @ 6.5A, 6V
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