TP65H100G4LSGB-TR
Part Number:
TP65H100G4LSGB-TR
Category:
-
Manufacturer:
Description:
Hi Volt FETs
Encapsulation:
Package:
Tape & Reel (TR)
Quantity:
0
RoHS Status:
Supported
PDF:
Stock
MOQ: 3000
Qty
Price
Total
3000+
$3.16
$9480
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
650 V
Package / Case
8-VDFN Exposed Pad
Technology
GaNFET (Gallium Nitride)
Gate Charge (Qg) (Max) @ Vgs
14.4 nC @ 10 V
Rds On (Max) @ Id, Vgs
110mOhm @ 12A, 10V
Power Dissipation (Max)
65.8W (Tc)
Supplier Device Package
8-PQFN (8x8)
Current - Continuous Drain (Id) @ 25°C
18.9A (Tc)
Vgs(th) (Max) @ Id
4.1V @ 1.8mA
Input Capacitance (Ciss) (Max) @ Vds
818 pF @ 400 V
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