TP65H070G4QS-TR
Part Number:
TP65H070G4QS-TR
Category:
-
Manufacturer:
Description:
650 V 29 A GAN FET
Encapsulation:
Package:
Cut Tape (CT)
Quantity:
1280
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$10.77
$10.77
10+
$7.4
$74
100+
$6.03
$603
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
29A (Tc)
Power Dissipation (Max)
96W (Tc)
Rds On (Max) @ Id, Vgs
85mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs
8.4 nC @ 10 V
Technology
GaNFET (Gallium Nitride)
Package / Case
8-PowerSFN
Vgs(th) (Max) @ Id
4.8V @ 700µA
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 400 V
Supplier Device Package
TOLL
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