TP65H070G4LSGB-TR
Part Number:
TP65H070G4LSGB-TR
Category:
-
Manufacturer:
Description:
GANFET N-CH 650V 29A QFN8X8
Encapsulation:
Package:
Cut Tape (CT)
Quantity:
2487
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$12.8
$12.8
10+
$8.89
$88.9
100+
$7.56
$756
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
29A (Tc)
Power Dissipation (Max)
96W (Tc)
Rds On (Max) @ Id, Vgs
85mOhm @ 16A, 10V
Package / Case
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs
8.4 nC @ 10 V
Technology
GaNFET (Gallium Nitride)
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 400 V
Vgs(th) (Max) @ Id
4.6V @ 700µA
Supplier Device Package
8-PQFN (8x8)
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