TP65H050G4BS
Part Number:
TP65H050G4BS
Category:
-
Manufacturer:
Description:
650 V 34 A GAN FET
Encapsulation:
Package:
Tube
Quantity:
543
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$15.82
$15.82
50+
$9.1
$455
100+
$8.45
$845
500+
$8.13
$4065
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
TO-263
Current - Continuous Drain (Id) @ 25°C
34A (Tc)
Technology
GaNFET (Gallium Nitride)
Power Dissipation (Max)
119W (Tc)
Rds On (Max) @ Id, Vgs
60mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
4.8V @ 700µA
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 400 V
Latest Products
szlcwkj@163.com
346959483
18923764396
Scan QR Code