TP65H035G4WSQA
Part Number:
TP65H035G4WSQA
Category:
-
Manufacturer:
Description:
650 V 46.5 GAN FET
Encapsulation:
Package:
Tube
Quantity:
43
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$22.13
$22.13
30+
$13.92
$417.6
120+
$13.32
$1598.4
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Package / Case
TO-247-3
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
TO-247-3
Power Dissipation (Max)
187W (Tc)
Technology
GaNFET (Gallium Nitride)
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 400 V
Rds On (Max) @ Id, Vgs
41mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
4.8V @ 1mA
Current - Continuous Drain (Id) @ 25°C
47.2A (Tc)
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