TP65H015G5WS
Part Number:
TP65H015G5WS
Category:
-
Manufacturer:
Description:
650 V 95 A GAN FET
Encapsulation:
Package:
Tube
Quantity:
505
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$35.48
$35.48
30+
$23.77
$713.1
120+
$23.65
$2838
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-247-3
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
TO-247-3
Current - Continuous Drain (Id) @ 25°C
93A (Tc)
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V
Power Dissipation (Max)
266W (Tc)
Technology
GaNFET (Gallium Nitride)
Rds On (Max) @ Id, Vgs
18mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
4.8V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds
5218 pF @ 400 V
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