SISS588DN-T1-BE3
Part Number:
SISS588DN-T1-BE3
Category:
-
Manufacturer:
Description:
N-CHANNEL 80 V (D-S) MOSFET 150
Encapsulation:
Package:
Cut Tape (CT)
Quantity:
6000
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$2.2
$2.2
10+
$1.4
$14
100+
$0.95
$95
500+
$0.75
$375
1000+
$0.71
$710
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
80 V
Gate Charge (Qg) (Max) @ Vgs
28.5 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
8mOhm @ 10A, 10V
Supplier Device Package
PowerPAK® 1212-8S
Package / Case
PowerPAK® 1212-8S
Power Dissipation (Max)
4.8W (Ta), 56.8W (Tc)
Current - Continuous Drain (Id) @ 25°C
16.9A (Ta), 58.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
1380 pF @ 40 V
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