SISS26LDN-T1-UE3
Part Number:
SISS26LDN-T1-UE3
Category:
-
Manufacturer:
Description:
N-CHANNEL 60 V (D-S) 150C MOSFET
Encapsulation:
Package:
Cut Tape (CT)
Quantity:
6000
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$1.85
$1.85
10+
$1.17
$11.7
100+
$0.78
$78
500+
$0.62
$310
1000+
$0.56
$560
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
60 V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Rds On (Max) @ Id, Vgs
4.3mOhm @ 15A, 10V
Power Dissipation (Max)
4.8W (Ta), 57W (Tc)
Supplier Device Package
PowerPAK® 1212-8S
Package / Case
PowerPAK® 1212-8S
Current - Continuous Drain (Id) @ 25°C
23.7A (Ta), 81.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
1980 pF @ 30 V
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