SIRA06DDP-T1-UE3
Part Number:
SIRA06DDP-T1-UE3
Category:
-
Manufacturer:
Description:
N-CHANNEL 30 V (D-S) 150C MOSFET
Encapsulation:
Package:
Cut Tape (CT)
Quantity:
5838
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$1.27
$1.27
10+
$0.8
$8
100+
$0.52
$52
500+
$0.41
$205
1000+
$0.37
$370
2000+
$0.34
$680
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
30 V
Gate Charge (Qg) (Max) @ Vgs
46 nC @ 10 V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
2330 pF @ 15 V
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Vgs (Max)
+20V, -16V
Rds On (Max) @ Id, Vgs
2.2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C
36A (Ta), 125A (Tc)
Power Dissipation (Max)
4.6W (Ta), 59W (Tc)
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