SIR5810DP-T1-RE3
Part Number:
SIR5810DP-T1-RE3
Category:
-
Manufacturer:
Description:
N-CHANNEL 80 V (D-S) MOSFET 150C
Encapsulation:
Package:
Cut Tape (CT)
Quantity:
5970
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$1.64
$1.64
10+
$1.04
$10.4
100+
$0.69
$69
500+
$0.54
$270
1000+
$0.49
$490
2000+
$0.47
$940
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
80 V
Gate Charge (Qg) (Max) @ Vgs
18.5 nC @ 10 V
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Rds On (Max) @ Id, Vgs
10mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds
900 pF @ 40 V
Current - Continuous Drain (Id) @ 25°C
15.5A (Ta), 53.3A (Tc)
Power Dissipation (Max)
3W (Ta), 56.8W (Tc)
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