SIR580DP-T1-BE3
Part Number:
SIR580DP-T1-BE3
Category:
-
Manufacturer:
Description:
N-CHANNEL 80 V (D-S) MOSFET 150C
Encapsulation:
Package:
Cut Tape (CT)
Quantity:
6000
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$3.09
$3.09
10+
$2
$20
100+
$1.38
$138
500+
$1.16
$580
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs
76 nC @ 10 V
Drain to Source Voltage (Vdss)
80 V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 20A, 10V
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Power Dissipation (Max)
6.25W (Ta), 104W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Current - Continuous Drain (Id) @ 25°C
35.8A (Ta), 146A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
4100 pF @ 40 V
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