S3M0025120N
Part Number:
S3M0025120N
Category:
-
Manufacturer:
Description:
MOSFETS SILICON CARBIDES 1200V 2
Encapsulation:
Package:
Box
Quantity:
0
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$30.88
$30.88
36+
$19.63
$706.68
108+
$19.11
$2063.88
Part Status
Active
Mounting Type
Chassis Mount
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
SOT-227-4, miniBLOC
Supplier Device Package
SOT-227
Current - Continuous Drain (Id) @ 25°C
77A (Tc)
Drain to Source Voltage (Vdss)
1200 V
Power Dissipation (Max)
517W (Tc)
Vgs(th) (Max) @ Id
4V @ 20mA
Technology
SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On)
18V
Vgs (Max)
+18V, -4V
Rds On (Max) @ Id, Vgs
32mOhm @ 48A, 18V
Gate Charge (Qg) (Max) @ Vgs
175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
3519 pF @ 1000 V
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