S3M0025120J
Part Number:
S3M0025120J
Category:
-
Manufacturer:
Description:
MOSFETS SILICON CARBIDES 1200V 2
Encapsulation:
Package:
Tube
Quantity:
0
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$15.79
$15.79
10+
$11.08
$110.8
100+
$8.44
$844
500+
$8.11
$4055
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Current - Continuous Drain (Id) @ 25°C
77A (Tc)
Supplier Device Package
TO-263-7
Drain to Source Voltage (Vdss)
1200 V
Power Dissipation (Max)
517W (Tc)
Vgs(th) (Max) @ Id
4V @ 20mA
Technology
SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On)
18V
Vgs (Max)
+18V, -4V
Rds On (Max) @ Id, Vgs
32mOhm @ 48A, 18V
Gate Charge (Qg) (Max) @ Vgs
175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
3519 pF @ 1000 V
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