S3M0025120D
Part Number:
S3M0025120D
Category:
-
Manufacturer:
Description:
MOSFET SILICON CARBIDE SIC 1200V
Encapsulation:
Package:
Tube
Quantity:
295
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$20.69
$20.69
10+
$14.77
$147.7
300+
$11.49
$3447
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
TO-247-3
Supplier Device Package
TO-247AD
Current - Continuous Drain (Id) @ 25°C
77A (Tc)
Drain to Source Voltage (Vdss)
1200 V
Power Dissipation (Max)
517W (Tc)
Vgs(th) (Max) @ Id
4V @ 20mA
Technology
SiC (Silicon Carbide Junction Transistor)
Drive Voltage (Max Rds On, Min Rds On)
18V
Vgs (Max)
+22V, -8V
Rds On (Max) @ Id, Vgs
32mOhm @ 48A, 18V
Gate Charge (Qg) (Max) @ Vgs
175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
3519 pF @ 1000 V
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