S2M0040120N2
Part Number:
S2M0040120N2
Category:
-
Manufacturer:
Description:
DIODE MOSFETS SILICON CARBIDES 1
Encapsulation:
Package:
Bulk
Quantity:
0
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$37.84
$37.84
36+
$24.67
$888.12
Part Status
Active
Mounting Type
Chassis Mount
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
SOT-227-4, miniBLOC
Supplier Device Package
SOT-227
Current - Continuous Drain (Id) @ 25°C
57A (Tc)
Drain to Source Voltage (Vdss)
1200 V
Drive Voltage (Max Rds On, Min Rds On)
20V
Vgs(th) (Max) @ Id
4V @ 10mA
Power Dissipation (Max)
312.5W (Tc)
Technology
SiCFET (Silicon Carbide)
Rds On (Max) @ Id, Vgs
52mOhm @ 40A, 20V
Vgs (Max)
+20V, -5V
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
2748 pF @ 1000 V
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