S1M1000170J
Part Number:
S1M1000170J
Category:
-
Manufacturer:
Description:
MOSFETS SILICON CARBIDES 1700V 1
Encapsulation:
Package:
Tube
Quantity:
0
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$5.52
$5.52
10+
$3.66
$36.6
100+
$2.61
$261
500+
$2.16
$1080
1000+
$2.02
$2020
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Power Dissipation (Max)
100W (Tc)
Supplier Device Package
TO-263-7
Current - Continuous Drain (Id) @ 25°C
5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Technology
SiCFET (Silicon Carbide)
Vgs(th) (Max) @ Id
4V @ 500µA
Drain to Source Voltage (Vdss)
1700 V
Vgs (Max)
+20V, -5V
Rds On (Max) @ Id, Vgs
1.3Ohm @ 2A, 20V
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
160 pF @ 1000 V
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