S1M1000170D
Part Number:
S1M1000170D
Category:
-
Manufacturer:
Description:
MOSFET SILICON CARBIDE SIC 1700V
Encapsulation:
Package:
Tube
Quantity:
160
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$5.03
$5.03
10+
$3.32
$33.2
300+
$2.05
$615
600+
$1.9
$1140
1200+
$1.78
$2136
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Current - Continuous Drain (Id) @ 25°C
5.2A (Tc)
Package / Case
TO-247-3
Supplier Device Package
TO-247AD
Drive Voltage (Max Rds On, Min Rds On)
20V
Power Dissipation (Max)
81W (Tc)
Vgs(th) (Max) @ Id
4V @ 500µA
Drain to Source Voltage (Vdss)
1700 V
Technology
SiC (Silicon Carbide Junction Transistor)
Vgs (Max)
+25V, -10V
Rds On (Max) @ Id, Vgs
1.3Ohm @ 2A, 20V
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
160 pF @ 1000 V
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