QS120SCM80D2P
Part Number:
QS120SCM80D2P
Category:
-
Manufacturer:
Description:
1200V N-CHANNEL SIC MOSFET 80 M
Encapsulation:
Package:
Tube
Quantity:
1000
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$10.18
$10.18
10+
$9.89
$98.9
250+
$9.63
$2407.5
500+
$9.08
$4540
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Power Dissipation (Max)
250W (Tc)
Drain to Source Voltage (Vdss)
1200 V
Drive Voltage (Max Rds On, Min Rds On)
20V
Technology
SiCFET (Silicon Carbide)
Vgs (Max)
+25V, -10V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 20V
Input Capacitance (Ciss) (Max) @ Vds
1001 pF @ 800 V
Supplier Device Package
D2PAK-7L
Vgs(th) (Max) @ Id
3.8V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 20 V
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