Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id
2V @ 250µA
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Power Dissipation (Max)
3.8W (Ta), 110W (Tc)
Drain to Source Voltage (Vdss)
40 V
Package / Case
8-PowerTDFN, 5 Leads
Mounting Type
Surface Mount, Wettable Flank
Current - Continuous Drain (Id) @ 25°C
38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs
1.4mOhm @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds
4300 pF @ 20 V
Supplier Device Package
5-DFNW (4.9x5.9) (8-SOFL-WF)