Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id
2V @ 250µA
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
40 V
Gate Charge (Qg) (Max) @ Vgs
181 nC @ 10 V
Package / Case
8-PowerTDFN, 5 Leads
Mounting Type
Surface Mount, Wettable Flank
Power Dissipation (Max)
3.9W (Ta), 200W (Tc)
Current - Continuous Drain (Id) @ 25°C
52A (Ta), 370A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
12168 pF @ 25 V
Rds On (Max) @ Id, Vgs
0.67mOhm @ 50A, 10V
Supplier Device Package
5-DFNW (4.9x5.9) (8-SOFL-WF)