NC2M120C20HTNG
Part Number:
NC2M120C20HTNG
Category:
-
Manufacturer:
Description:
SIC MOSFET 1200V 20M 126A TO247
Encapsulation:
Package:
Tube
Quantity:
100
RoHS Status:
Supported
PDF:
Stock
MOQ: 50
Qty
Price
Total
50+
$42.89
$2144.5
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-247-4
Supplier Device Package
TO-247-4L
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1.2 kV
Current - Continuous Drain (Id) @ 25°C
126A (Tc)
Vgs (Max)
+20V, -5V
Rds On (Max) @ Id, Vgs
30mOhm @ 63A, 20V
Vgs(th) (Max) @ Id
4.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
282 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
4615 pF @ 1 kV
Power Dissipation (Max)
625W (Ta)
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