MXP120A080FE-T1GE3
Part Number:
MXP120A080FE-T1GE3
Category:
-
Manufacturer:
Description:
SIC MOSFET
Encapsulation:
Package:
Tape & Reel (TR)
Quantity:
0
RoHS Status:
Supported
PDF:
Stock
MOQ: 1600
Qty
Price
Total
1600+
$5.61
$8976
Part Status
Active
Supplier Device Package
-
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
-
Package / Case
-
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Power Dissipation (Max)
140W (Tc)
Drain to Source Voltage (Vdss)
1200 V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 20V
Vgs (Max)
+20V, -5V
Drive Voltage (Max Rds On, Min Rds On)
18V, 20V
Vgs(th) (Max) @ Id
2.69V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
47.3 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
1156 pF @ 800 V
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