IXSJ80N120R1
Part Number:
IXSJ80N120R1
Category:
-
Manufacturer:
Description:
1200V 18M (30A @ 25C) SIC MOSFET
Encapsulation:
Package:
Tube
Quantity:
0
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$32.25
$32.25
30+
$20.96
$628.8
120+
$20.19
$2422.8
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Grade
-
Qualification
-
Package / Case
TO-247-3
Operating Temperature
-40°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
85A (Tc)
Drain to Source Voltage (Vdss)
1200 V
Technology
SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On)
18V
Vgs (Max)
+21V, -4V
Vgs(th) (Max) @ Id
4.8V @ 22.2mA
Gate Charge (Qg) (Max) @ Vgs
154 nC @ 18 V
Supplier Device Package
ISO247-3L
Rds On (Max) @ Id, Vgs
22.5mOhm @ 40A, 18V
Input Capacitance (Ciss) (Max) @ Vds
4522 pF @ 800 V
Power Dissipation (Max)
266W
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