IXSJ25N120R1
Part Number:
IXSJ25N120R1
Category:
-
Manufacturer:
Description:
1200V 62M (25A @ 25C) SIC MOSFET
Encapsulation:
Package:
Tube
Quantity:
0
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$14.94
$14.94
30+
$9.07
$272.1
120+
$7.79
$934.8
510+
$7.55
$3850.5
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Grade
-
Qualification
-
Package / Case
TO-247-3
Current - Continuous Drain (Id) @ 25°C
28A (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
1200 V
Technology
SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On)
18V
Vgs (Max)
+21V, -4V
Rds On (Max) @ Id, Vgs
81mOhm @ 12A, 18V
Supplier Device Package
ISO247-3L
Vgs(th) (Max) @ Id
4.8V @ 5.3mA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
1435 pF @ 800 V
Power Dissipation (Max)
75.3W (Tc)
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