IV2Q171R0D7Z
Part Number:
IV2Q171R0D7Z
Category:
-
Manufacturer:
Description:
GEN2, SIC MOSFET, 1700V 1000MOHM
Encapsulation:
Package:
Strip
Quantity:
60
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$6.2
$6.2
10+
$4.14
$41.4
100+
$2.97
$297
500+
$2.47
$1235
1000+
$2.37
$2370
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Supplier Device Package
TO-263-7
Current - Continuous Drain (Id) @ 25°C
6.3A (Tc)
Power Dissipation (Max)
73W (Tc)
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700 V
Drive Voltage (Max Rds On, Min Rds On)
18V
Vgs (Max)
+20V, -5V
Package / Case
TO-263-7
Rds On (Max) @ Id, Vgs
910mOhm @ 1A, 18V
Vgs(th) (Max) @ Id
4.5V @ 380uA
Gate Charge (Qg) (Max) @ Vgs
16.5 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
285 pF @ 1000 V
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