IV2Q12160T4Z
Part Number:
IV2Q12160T4Z
Category:
-
Manufacturer:
Description:
GEN2, SIC MOSFET, 1200V 160MOHM,
Encapsulation:
Package:
Tube
Quantity:
60
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$8.11
$8.11
10+
$5.49
$54.9
100+
$4.01
$401
500+
$3.38
$1690
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Power Dissipation (Max)
136W (Tc)
Drain to Source Voltage (Vdss)
1200 V
Package / Case
TO-247-4
Technology
SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On)
18V
Supplier Device Package
TO-247-4
Rds On (Max) @ Id, Vgs
208mOhm @ 5A, 18V
Vgs (Max)
+20V, -5V
Vgs(th) (Max) @ Id
4.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
580 pF @ 800 V
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