IV2Q06025D7Z
Part Number:
IV2Q06025D7Z
Category:
-
Manufacturer:
Description:
GEN 2, SIC MOSFET, 650V 25MOHM,
Encapsulation:
Package:
Tube
Quantity:
0
RoHS Status:
Supported
PDF:
Stock
MOQ: 800
Qty
Price
Total
800+
$6.59
$5272
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
TO-263-7
Power Dissipation (Max)
600W (Tc)
Technology
SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On)
18V
Vgs (Max)
+20V, -5V
Current - Continuous Drain (Id) @ 25°C
111A (Tc)
Rds On (Max) @ Id, Vgs
33mOhm @ 40A, 18V
Vgs(th) (Max) @ Id
4.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs
125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
3090 pF @ 600 V
Package / Case
TO-263-7
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