IV1Q12080T4Z
Part Number:
IV1Q12080T4Z
Category:
-
Manufacturer:
Description:
SIC MOSFET, 1200V 80MOHM, TO247-
Encapsulation:
Package:
Tube
Quantity:
0
RoHS Status:
Supported
PDF:
Stock
MOQ: 120
Qty
Price
Total
120+
$4.9
$588
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
300W (Tc)
Current - Continuous Drain (Id) @ 25°C
42A (Tc)
Drain to Source Voltage (Vdss)
1200 V
Package / Case
TO-247-4
Drive Voltage (Max Rds On, Min Rds On)
20V
Technology
SiCFET (Silicon Carbide)
Supplier Device Package
TO-247-4
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
1680 pF @ 800 V
Rds On (Max) @ Id, Vgs
100mOhm @ 10A, 20V
Vgs(th) (Max) @ Id
5V @ 3.10mA
Gate Charge (Qg) (Max) @ Vgs
74 nC @ 20 V
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