IV1Q12030T4G
Part Number:
IV1Q12030T4G
Category:
-
Manufacturer:
Description:
SIC MOSFET, 1200V 30MOHM, TO247-
Encapsulation:
Package:
Tube
Quantity:
0
RoHS Status:
Supported
PDF:
Stock
MOQ: 120
Qty
Price
Total
120+
$9.33
$1119.6
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
79A (Tc)
Package / Case
TO-247-4
Drive Voltage (Max Rds On, Min Rds On)
20V
Technology
SiCFET (Silicon Carbide)
Supplier Device Package
TO-247-4
Vgs (Max)
+20V, -5V
Rds On (Max) @ Id, Vgs
40mOhm @ 40A, 20V
Vgs(th) (Max) @ Id
5V @ 9.4mA
Gate Charge (Qg) (Max) @ Vgs
168 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
3980 pF @ 800 V
Power Dissipation (Max)
410W (Tc)
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