IMZA120R026M2HXKSA1
Part Number:
IMZA120R026M2HXKSA1
Category:
-
Manufacturer:
Description:
IMZA120R026M2HXKSA1
Encapsulation:
Package:
Tube
Quantity:
0
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$15.25
$15.25
30+
$9.3
$279
120+
$8.06
$967.2
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
69A (Tc)
Package / Case
TO-247-4
Technology
SiCFET (Silicon Carbide)
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 18 V
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Vgs (Max)
+23V, -7V
Supplier Device Package
PG-TO247-4-8
Vgs(th) (Max) @ Id
5.1V @ 8.6mA
Input Capacitance (Ciss) (Max) @ Vds
1990 pF @ 800 V
Power Dissipation (Max)
289W (Tc)
Rds On (Max) @ Id, Vgs
34mOhm @ 27A, 18V
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