GP3T080A120H
Part Number:
GP3T080A120H
Category:
-
Manufacturer:
Description:
GEN3 1200V, 80M SIC MOSFET, TO-2
Encapsulation:
Package:
Tube
Quantity:
10
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$6.3
$6.3
10+
$4.22
$42.2
100+
$3.03
$303
500+
$2.52
$1260
1000+
$2.42
$2420
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Current - Continuous Drain (Id) @ 25°C
32A (Tc)
Drain to Source Voltage (Vdss)
1200 V
Power Dissipation (Max)
147W (Tc)
Package / Case
TO-247-4
Vgs(th) (Max) @ Id
4V @ 5mA
Technology
SiC (Silicon Carbide Junction Transistor)
Drive Voltage (Max Rds On, Min Rds On)
18V
Supplier Device Package
TO-247-4
Vgs (Max)
+22V, -8V
Rds On (Max) @ Id, Vgs
100mOhm @ 10A, 18V
Gate Charge (Qg) (Max) @ Vgs
53 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
1351 pF @ 1000 V
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