GP3T020A120H
Part Number:
GP3T020A120H
Category:
-
Manufacturer:
Description:
GEN3 1200V, 20M SIC MOSFET, TO-2
Encapsulation:
Package:
Tube
Quantity:
18
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$12.94
$12.94
10+
$8.98
$89.8
100+
$6.75
$675
500+
$6.26
$3130
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
115A (Tc)
Package / Case
TO-247-4
Vgs(th) (Max) @ Id
4V @ 20mA
Power Dissipation (Max)
429W (Tc)
Technology
SiC (Silicon Carbide Junction Transistor)
Drive Voltage (Max Rds On, Min Rds On)
18V
Supplier Device Package
TO-247-4
Vgs (Max)
+22V, -8V
Rds On (Max) @ Id, Vgs
25mOhm @ 40A, 18V
Gate Charge (Qg) (Max) @ Vgs
234 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
6078 pF @ 1000 V
Latest Products
szlcwkj@163.com
346959483
18923764396
Scan QR Code