GP2T030A170H
Stock
MOQ: 1
Qty
Price
Total
1+
$31.05
$31.05
10+
$22.7
$227
100+
$19.25
$1925
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Current - Continuous Drain (Id) @ 25°C
83A (Tc)
Package / Case
TO-247-4
Drive Voltage (Max Rds On, Min Rds On)
20V
Vgs(th) (Max) @ Id
4V @ 20mA
Drain to Source Voltage (Vdss)
1700 V
Technology
SiC (Silicon Carbide Junction Transistor)
Vgs (Max)
+25V, -10V
Supplier Device Package
TO-247-4
Rds On (Max) @ Id, Vgs
36mOhm @ 60A, 20V
Gate Charge (Qg) (Max) @ Vgs
233 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
6202 pF @ 1.2 kV
Power Dissipation (Max)
564W (Tc)
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