GCMX010B120S1-E1
Part Number:
GCMX010B120S1-E1
Category:
-
Manufacturer:
Description:
1200V, 10M SIC MOSFET MODULE, SO
Encapsulation:
Package:
Tube
Quantity:
5
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$48.41
$48.41
10+
$36.33
$363.3
100+
$33.51
$3351
Part Status
Active
Mounting Type
Chassis Mount
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
SOT-227-4, miniBLOC
Supplier Device Package
SOT-227
Drain to Source Voltage (Vdss)
1200 V
Drive Voltage (Max Rds On, Min Rds On)
20V
Technology
SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C
204A (Tc)
Vgs (Max)
+25V, -10V
Power Dissipation (Max)
652W (Tc)
Rds On (Max) @ Id, Vgs
14mOhm @ 100A, 20V
Vgs(th) (Max) @ Id
4V @ 40mA
Gate Charge (Qg) (Max) @ Vgs
418 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
10864 pF @ 1000 V
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