GCMS040C120S1-E1
Part Number:
GCMS040C120S1-E1
Category:
-
Manufacturer:
Description:
GEN3 1200V 40M SIC MOSFET & SBD
Encapsulation:
Package:
Tube
Quantity:
10
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$27.49
$27.49
10+
$19.95
$199.5
100+
$16.5
$1650
Part Status
Active
Mounting Type
Chassis Mount
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
SOT-227-4, miniBLOC
Current - Continuous Drain (Id) @ 25°C
53A (Tc)
Supplier Device Package
SOT-227
Drain to Source Voltage (Vdss)
1200 V
Power Dissipation (Max)
183W (Tc)
Vgs(th) (Max) @ Id
4V @ 10mA
Technology
SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
52mOhm @ 20A, 18V
Vgs (Max)
+22V, -8V
Gate Charge (Qg) (Max) @ Vgs
108 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
2745 pF @ 1000 V
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