GCMS008C120S1-E1
Part Number:
GCMS008C120S1-E1
Category:
-
Manufacturer:
Description:
GEN3 1200V 8M SIC MOSFET & SBD
Encapsulation:
Package:
Tube
Quantity:
29
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$46.3
$46.3
10+
$34.65
$346.5
100+
$31.71
$3171
Part Status
Active
Mounting Type
Chassis Mount
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
SOT-227-4, miniBLOC
Supplier Device Package
SOT-227
Drain to Source Voltage (Vdss)
1200 V
Technology
SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On)
18V
Vgs (Max)
+22V, -8V
Power Dissipation (Max)
536W (Tc)
Rds On (Max) @ Id, Vgs
12mOhm @ 100A, 18V
Current - Continuous Drain (Id) @ 25°C
189A (Tc)
Vgs(th) (Max) @ Id
4V @ 40mA
Gate Charge (Qg) (Max) @ Vgs
506 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
14085 pF @ 1000 V
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