G3F65MT12J-TR
Part Number:
G3F65MT12J-TR
Category:
-
Manufacturer:
Description:
1200V 65M TO-263-7 G3F SIC MOSFE
Encapsulation:
Package:
Cut Tape (CT)
Quantity:
699
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$10.46
$10.46
10+
$8.58
$85.8
100+
$7.41
$741
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Current - Continuous Drain (Id) @ 25°C
37A (Tc)
Supplier Device Package
TO-263-7
Drain to Source Voltage (Vdss)
1200 V
Power Dissipation (Max)
171W (Tc)
Technology
SiC (Silicon Carbide Junction Transistor)
Drive Voltage (Max Rds On, Min Rds On)
18V
Vgs (Max)
+22V, -10V
Vgs(th) (Max) @ Id
4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 18 V
Rds On (Max) @ Id, Vgs
86mOhm @ 15A, 18V
Input Capacitance (Ciss) (Max) @ Vds
1298 pF @ 800 V
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