Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
650 V
Power Dissipation (Max)
167W (Tc)
Current - Continuous Drain (Id) @ 25°C
52A (Tc)
Technology
SiC (Silicon Carbide Junction Transistor)
Supplier Device Package
TO-247-4
Input Capacitance (Ciss) (Max) @ Vds
1640 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Vgs(th) (Max) @ Id
4.3V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 18 V
Rds On (Max) @ Id, Vgs
54mOhm @ 20A, 18V