Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
63A (Tc)
Power Dissipation (Max)
263W (Tc)
Technology
SiC (Silicon Carbide Junction Transistor)
Drive Voltage (Max Rds On, Min Rds On)
18V
Supplier Device Package
TO-247-4
Gate Charge (Qg) (Max) @ Vgs
104 nC @ 18 V
Rds On (Max) @ Id, Vgs
45mOhm @ 26A, 18V
Vgs(th) (Max) @ Id
4.3V @ 18mA
Input Capacitance (Ciss) (Max) @ Vds
2418 pF @ 800 V