G3F34MT12J-TR
Part Number:
G3F34MT12J-TR
Category:
-
Manufacturer:
Description:
1200V 34M TO-263-7 G3F SIC MOSFE
Encapsulation:
Package:
Cut Tape (CT)
Quantity:
800
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$17.85
$17.85
10+
$14.54
$145.4
100+
$13.8
$1380
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Power Dissipation (Max)
300W (Tc)
Supplier Device Package
TO-263-7
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
68A (Tc)
Technology
SiC (Silicon Carbide Junction Transistor)
Drive Voltage (Max Rds On, Min Rds On)
18V
Gate Charge (Qg) (Max) @ Vgs
104 nC @ 18 V
Vgs (Max)
+22V, -10V
Rds On (Max) @ Id, Vgs
45mOhm @ 26A, 18V
Vgs(th) (Max) @ Id
4.3V @ 18mA
Input Capacitance (Ciss) (Max) @ Vds
2418 pF @ 800 V
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