G3F18MT12J-TR
Part Number:
G3F18MT12J-TR
Category:
-
Manufacturer:
Description:
1200V 18M TO-263-7 G3F SIC MOSFE
Encapsulation:
Package:
Cut Tape (CT)
Quantity:
799
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$27.71
$27.71
10+
$23.65
$236.5
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Supplier Device Package
TO-263-7
Drain to Source Voltage (Vdss)
1200 V
Technology
SiC (Silicon Carbide Junction Transistor)
Drive Voltage (Max Rds On, Min Rds On)
18V
Current - Continuous Drain (Id) @ 25°C
122A (Tc)
Vgs (Max)
+22V, -10V
Rds On (Max) @ Id, Vgs
25mOhm @ 45A, 18V
Vgs(th) (Max) @ Id
4.3V @ 35mA
Gate Charge (Qg) (Max) @ Vgs
212 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
4962 pF @ 800 V
Power Dissipation (Max)
526W (Tc)
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