G1K1P10TE
G1K1P10TE
G1K1P10TE
Part Number:
G1K1P10TE
Category:
-
Manufacturer:
Description:
MOSFET P-CH 100V 24A 88W TO-220
Encapsulation:
Package:
Tube
Quantity:
50
RoHS Status:
Supported
Share:
PDF:
RFQ
Stock
MOQ: 1
Qty
Price
Total
1+
$1.52
$1.52
10+
$0.96
$9.6
100+
$0.64
$64
500+
$0.5
$250
1000+
$0.45
$450
2000+
$0.41
$820
5000+
$0.37
$1850
10000+
$0.35
$3500
Part Status
Active
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Vgs (Max)
±20V
Operating Temperature
-55°C ~ 150°C (TJ)
FET Type
P-Channel
Power Dissipation (Max)
88W (Tc)
Vgs(th) (Max) @ Id
2.5V @ 250µA
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Current - Continuous Drain (Id) @ 25°C
24A (Tc)
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Supplier Device Package
TO-252
Rds On (Max) @ Id, Vgs
110mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds
3300 pF @ 50 V
Latest Products
TW048U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.048 (T
TW027U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.027 (T
TW083U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.083 (T
CDMS24760-170 SL
Central Semiconductor Corp
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24740-170 SL
Central Semiconductor Corp
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24780-170 SL
Central Semiconductor Corp
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24720-170 SL
Central Semiconductor Corp
1700V THROUGH-HOLE MOSFET N-CHAN
SL3134K
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 150MW 1 N-CHANNEL SOT-