Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
180W (Tc)
Current - Continuous Drain (Id) @ 25°C
29A (Tc)
Drain to Source Voltage (Vdss)
1200 V
Supplier Device Package
TO-247-4L
Technology
SiC (Silicon Carbide Junction Transistor)
Drive Voltage (Max Rds On, Min Rds On)
18V
Vgs(th) (Max) @ Id
2.5V @ 20mA
Rds On (Max) @ Id, Vgs
112mOhm @ 8A, 18V
Gate Charge (Qg) (Max) @ Vgs
73 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
1548 pF @ 800 V