Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
277W (Tc)
Current - Continuous Drain (Id) @ 25°C
62A (Tc)
Technology
SiC (Silicon Carbide Junction Transistor)
Drive Voltage (Max Rds On, Min Rds On)
18V
Drain to Source Voltage (Vdss)
750 V
Gate Charge (Qg) (Max) @ Vgs
112 nC @ 15 V
Supplier Device Package
TO-247-3L
Vgs(th) (Max) @ Id
2.5V @ 40mA
Rds On (Max) @ Id, Vgs
48mOhm @ 22A, 18V
Input Capacitance (Ciss) (Max) @ Vds
2818 pF @ 500 V