Operating Temperature
-55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C
43A (Tc)
Drain to Source Voltage (Vdss)
650 V
Technology
SiC (Silicon Carbide Junction Transistor)
Drive Voltage (Max Rds On, Min Rds On)
18V
Vgs(th) (Max) @ Id
2.5V @ 20mA
Power Dissipation (Max)
202W (Tc)
Supplier Device Package
TO-247-3L
Gate Charge (Qg) (Max) @ Vgs
69 nC @ 15 V
Rds On (Max) @ Id, Vgs
80mOhm @ 15A, 18V
Input Capacitance (Ciss) (Max) @ Vds
1499 pF @ 400 V