Operating Temperature
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
65A (Tc)
Supplier Device Package
TO-247-4L
Technology
SiC (Silicon Carbide Junction Transistor)
Drive Voltage (Max Rds On, Min Rds On)
18V
Power Dissipation (Max)
202W (Tc)
Rds On (Max) @ Id, Vgs
45mOhm @ 30A, 18V
Gate Charge (Qg) (Max) @ Vgs
125 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
3015 pF @ 400 V
Vgs(th) (Max) @ Id
2.2V @ 40mA