EPC2367ENGRT
Part Number:
EPC2367ENGRT
Category:
-
Manufacturer:
Description:
TRANS GAN 100V .0012OHM 5QFN
Encapsulation:
Package:
Cut Tape (CT)
Quantity:
3572
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$7.58
$7.58
10+
$5.11
$51.1
100+
$3.79
$379
Part Status
Active
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
FET Feature
-
Grade
-
Qualification
-
Power Dissipation (Max)
-
Drive Voltage (Max Rds On, Min Rds On)
5V
Operating Temperature
-40°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 5 V
Mounting Type
Surface Mount, Wettable Flank
Technology
GaNFET (Gallium Nitride)
Vgs (Max)
+6V, -4V
Vgs(th) (Max) @ Id
2.5V @ 10mA
Current - Continuous Drain (Id) @ 25°C
78A (Tj)
Rds On (Max) @ Id, Vgs
1.2mOhm @ 30A, 5V
Input Capacitance (Ciss) (Max) @ Vds
2170 pF @ 50 V
Supplier Device Package
5-QFN (3.3x3.3)
Package / Case
5-PowerWQFN
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